Changes

Jump to navigation Jump to search
1,112 bytes added ,  01:56, 22 September 2015
Line 508: Line 508:  
</syntaxhighlight>
 
</syntaxhighlight>
 
}}
 
}}
 +
 +
 +
=== Creating a model for a memristor device ===
 +
 +
To demonstrate how to write a model evaluator file (SBN file), we
 +
will discuss the simplest memristor model shown in this paper by [[User:KaKiLa| KaKiLa]] et al. (KaKiLa, can you please add a reference to the paper?)
 +
 +
The device model is presented in the original paper as
 +
 +
<math>
 +
\left\{
 +
\begin{array}{l}
 +
\dot{x} = \mu I(t)\\
 +
H(x) = \left\{
 +
        \begin{array}{l}
 +
        R \; x \le 0\\
 +
        R - (R - r) x \; 0 < x < 1\\
 +
        r \; x > 1
 +
        \end{array}       
 +
        \right.\\
 +
V(t) = H(x) I(t)
 +
\end{array}
 +
\right.
 +
</math>
 +
 +
The first thing to do is to change the model from impedance to admittance form
 +
and write the definition of the internal variable in an "implicit form"
 +
 +
<math>
 +
\left\{
 +
\begin{array}{l}
 +
  Q(V(t), x(t)) = \dfrac{1}{\mu} \dot{x} - I(t) = 0\\
 +
  H(x) = \left\{
 +
        \begin{array}{l}
 +
        R \; x \le 0\\
 +
        R - (R - r) x \; 0 < x < 1\\
 +
        r \; x > 1
 +
        \end{array}       
 +
        \right.\\
 +
I(t) = \dfrac{V(t)}{H(x)}
 +
\end{array}
 +
\right.
 +
</math>
 +
 +
It is then useful to compute the derivatives
349

edits

Navigation menu