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1,112 bytes added ,  01:56, 22 September 2015
</syntaxhighlight>
}}
 
 
=== Creating a model for a memristor device ===
 
To demonstrate how to write a model evaluator file (SBN file), we
will discuss the simplest memristor model shown in this paper by [[User:KaKiLa| KaKiLa]] et al. (KaKiLa, can you please add a reference to the paper?)
 
The device model is presented in the original paper as
 
<math>
\left\{
\begin{array}{l}
\dot{x} = \mu I(t)\\
H(x) = \left\{
\begin{array}{l}
R \; x \le 0\\
R - (R - r) x \; 0 < x < 1\\
r \; x > 1
\end{array}
\right.\\
V(t) = H(x) I(t)
\end{array}
\right.
</math>
 
The first thing to do is to change the model from impedance to admittance form
and write the definition of the internal variable in an "implicit form"
 
<math>
\left\{
\begin{array}{l}
Q(V(t), x(t)) = \dfrac{1}{\mu} \dot{x} - I(t) = 0\\
H(x) = \left\{
\begin{array}{l}
R \; x \le 0\\
R - (R - r) x \; 0 < x < 1\\
r \; x > 1
\end{array}
\right.\\
I(t) = \dfrac{V(t)}{H(x)}
\end{array}
\right.
</math>
 
It is then useful to compute the derivatives
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