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edits
Ocs package: Difference between revisions
→Creating a model for a memristor device
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endfunction | endfunction | ||
</syntaxhighlight> | |||
}} | |||
As an example let's run a simulation by applying a sinusoidal signal with varying | |||
frequency | |||
{{Code| memristor model implementation|<syntaxhighlight lang="octave"> | |||
t = linspace (0, 1, 100); | |||
y = [(sin (2 * pi * t * 1.5)), (sin (2 * pi * t * 4))(2:end)]; | |||
t = [t, (linspace (1, 2, 100))(2:end)]; | |||
pwl = [t; y](:).'; | |||
c1.LCR = []; | |||
c1.totextvar = 1; | |||
c1.NLC(1).("func") = "Mvoltagesources"; | |||
c1.NLC(1).("section") = "pwl"; | |||
c1.NLC(1).("nextvar") = 2; | |||
c1.NLC(1).("npar") = 398; | |||
c1.NLC(1).("nrows") = 1; | |||
c1.NLC(1).("nparnames") = 0; | |||
c1.NLC(1).("parnames") = {}; | |||
c1.NLC(1).("pvmatrix") = pwl; | |||
c1.NLC(1).("vnmatrix") = [1 0]; | |||
c1.NLC(1).("nintvar") = 1; | |||
c1.NLC(1).("osintvar") = 0; | |||
c1.NLC(2).("func") = "Mmemristors"; | |||
c1.NLC(2).("section") = "STRUKOV"; | |||
c1.NLC(2).("nextvar") = 2; | |||
c1.NLC(2).("npar") = 3; | |||
c1.totintvar = 2; | |||
c1.namesn = [1 2 3]; | |||
c1.NLC(2).("nrows") = 1; | |||
c1.NLC(2).("nparnames") = 3; | |||
c1.NLC(2).("parnames") = {"MU", "RH", "RL"}; | |||
c1.NLC(2).("pvmatrix") = [1.8e3 1e3 1]; | |||
c1.NLC(2).("vnmatrix") = [1 0]; | |||
c1.NLC(2).("nintvar") = 1; | |||
c1.NLC(2).("osintvar") = 1; | |||
c1.namess = {"voltage", "current", "x"}; | |||
start = [0 0 0.1]; | |||
%% c = prs_iff ("memristor_example"); | |||
out = tst_backward_euler (c1, start.', t, 1e-2, 300, {'voltage', 'current'}); | |||
plot (out(1, 1:100), out (2, 1:100), 'r', | |||
out(1, 101:end), out(2, 101:end), 'k') | |||
legend ("frequency 1 Hz", "frequency 4 Hz") | |||
</syntaxhighlight> | </syntaxhighlight> | ||
}} | }} | ||