Difference between revisions of "Ocs package"

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(A CMOS AND GATE)
(A CMOS AND GATE)
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** 3 Voltage sources
 
** 3 Voltage sources
  
For the MOSFETs we use a very simple algebraic model defined by the following code
+
For the n-type MOSFETs we use a very simple algebraic model defined by the following code
  
 
{{Code|Model evaluator file for simple MOSFET models |<syntaxhighlight lang="octave" style="font-size:13px">
 
{{Code|Model evaluator file for simple MOSFET models |<syntaxhighlight lang="octave" style="font-size:13px">

Revision as of 23:38, 21 September 2015

OCS : Octave Circuit Simulator

History and Motivation

Problem Formulation

Data Structure

File Formats

Tutorials

A CMOS AND GATE

Schematic for a CMOS AND gate

Here we show how to set up the simulation of the CMOS AND gate in the figure. The circuit has

  • 9 Elements
    • 6 MOSFETs (3 n-type + 3 p-type)
    • 3 Voltage sources

For the n-type MOSFETs we use a very simple algebraic model defined by the following code

Code: Model evaluator file for simple MOSFET models
function [a,b,c] = Mnmosfet (string, parameters, parameternames, extvar, intvar, t)   
  
  switch string

    case 'simple',
      
      rd = 1e6;
      
      for ii=1:length(parameternames)
        eval([parameternames{ii} "=",...
              num2str(parameters(ii)) " ;"])    
      endfor
      
      vg   = extvar(1);
      vs   = extvar(2);
      vd   = extvar(3);
      vb   = extvar(4);
      
      vgs  = vg-vs;
      vds  = vd-vs;
      
      if (vgs < Vth)
        
        
        gm = 0;
        gd = 1/rd;
        id = vds*gd;
        
      elseif ((vgs-Vth)>=(vds))&(vds>=0)
        
        id = k*((vgs-Vth)*vds-(vds^2)/2)+vds/rd;
        gm = k*vds;
        gd = k*(vgs-Vth-vds)+1/rd;
        
      elseif ((vgs-Vth)>=(vds))&(vds<0)
        
        gm = 0;
        gd = 1/rd;
        id = vds*gd;
        
      else # (i.e. if 0 <= vgs-vth <= vds)
        
        id = k*(vgs-Vth)^2/2+vds/rd;
        gm = k*(vgs-Vth);
        gd = 1/rd;
        
      endif
      
      a = zeros(4);
      
      b = [ 0     0         0   0;
           -gm   (gm+gd)   -gd  0; 
            gm  -(gm+gd)    gd  0;
            0     0         0   0];
      
      c = [0 -id id 0]';
      break;

    otherwise

      error(["Mnmosfet: unknown option " string]);
      
  endswitch

endfunction

The model for the p-type devices is entirely analogous.

Below we show three methods for constructing the circuit data structure

Once the circuit data structure is loaded the simulation can be started by the following commands

Code: Run the AND gate simulation
x         = [.5 .5 .33 .66 .5 1 0 0 1 ]';
t         = linspace (0, .5, 100);
pltvars   = {"Va", "Vb", "Va_and_b"};
dmp       = .2;
tol       = 1e-15;
maxit     = 100;
out       = tst_backward_euler (outstruct, x, t, tol, maxit, pltvars);
Result of the CMOS AND gate switching simulation

Click on the figure to the right to see the simulation results


Build the AND GATE structure directly

Code: Build the AND GATE structure via an Octave script
## NLC

# n-type
outstruct.NLC(1).func = "Mnmosfet";
outstruct.NLC(1).section = "simple";
outstruct.NLC(1).nextvar = 4;
outstruct.NLC(1).npar = 3;
outstruct.NLC(1).nparnames = 3;
outstruct.NLC(1).parnames = { "k", "Vth", "rd"};

outstruct.NLC(1).pvmatrix = [1.0000e-04   1.0000e-01   1.0000e+07
                             1.0000e-04   1.0000e-01   1.0000e+07
                             1.0000e-04   1.0000e-01   1.0000e+07];

outstruct.NLC(1).vnmatrix = [1   3   4   0
                             2   0   3   0
                             4   0   5   0];

outstruct.NLC(1).nintvar = [0 0 0];
outstruct.NLC(1).osintvar = [0 0 0];


# p-type
outstruct.NLC(2).func = "Mpmosfet";
outstruct.NLC(2).section = "simple";
outstruct.NLC(2).nextvar = 4;
outstruct.NLC(2).npar = 3;
outstruct.NLC(2).nparnames = 3;
outstruct.NLC(2).parnames = { "k", "Vth", "rd"};
outstruct.NLC(2).pvmatrix = [-1.0000e-04  -1.0000e-01   1.0000e+07
                             -1.0000e-04  -1.0000e-01   1.0000e+07
                             -1.0000e-04  -1.0000e-01   1.0000e+07];
outstruct.NLC(2).vnmatrix =  [ 1   6   4   6
                               2   6   4   6
                               4   6   5   6];

outstruct.NLC(2).nintvar = [0 0 0];
outstruct.NLC(2).osintvar = [0 0 0];

# Va and Vb

outstruct.NLC(3).func = "Mvoltagesources";
outstruct.NLC(3).section = "sinwave";
outstruct.NLC(3).nextvar = 2;
outstruct.NLC(3).npar = 4;
outstruct.NLC(3).nparnames = 4;
outstruct.NLC(3).parnames = {"Ampl", "f", "delay", "shift"};
outstruct.NLC(3).pvmatrix = [0.50000   1.00000   0.00000   0.50000
                             0.50000   2.00000   0.25000   0.50000];
outstruct.NLC(3).vnmatrix = [ 1   0
                              2   0];
outstruct.NLC(3).nintvar = [1 1];
outstruct.NLC(3).osintvar = [0 0];

## LCR

# Vdd
outstruct.LCR(1).func = "Mvoltagesources";
outstruct.LCR(1).section = "DC";
outstruct.LCR(1).nextvar = 2;
outstruct.LCR(1).npar = 1;
outstruct.LCR(1).nparnames = 1;
outstruct.LCR(1).parnames = {"V"};
outstruct.LCR(1).pvmatrix = 1;
outstruct.LCR(1).vnmatrix = [6 0];
outstruct.LCR(1).nintvar = 1;
outstruct.LCR(1).osintvar = 2;

## 

outstruct.namesn = [1   2   5   6   7   8   9];
outstruct.namess = {"Va", "Vb", "Va_and_b", "Vdd", "I1", "I2", "I3"};
outstruct.totextvar =  6;
outstruct.totintvar =  3;


Build the AND gate circuit structure parsing an IFF netlist

To parse an IFF format netlist of the CMOS AND gate we can use the following command

Code: Load the AND circuit structure parsing an IFF netlist
outstruct = prs_iff ("and");

The IFF netlist consists of the .cir file named "and.cir" shown below

Code: IFF netlist for the AND gate (.cir file)
% 0.1b1
% A Simple CMOS AND GATE
%
% N-Mosfets
% There are 3 N-Mosfets
Mnmosfet simple 4 3
3 3
k          Vth		rd
1e-4       0.1		1e7
1e-4       0.1		1e7
1e-4       0.1		1e7
1 3 4 0 
2 0 3 0 
4 0 5 0 
%
% P-Mosfets
Mpmosfet simple 4 3
3 3
k           Vth		rd
-1e-4       -0.1	1e7
-1e-4       -0.1	1e7
-1e-4       -0.1	1e7
1 6 4 6 
2 6 4 6 
4 6 5 6
%
% Input voltage sources
Mvoltagesources sinwave 2 4
2 4
Ampl      f       delay     shift
0.5       1       0.0       0.5
0.5       2       0.25      0.5
1 0  
2 0  
END
%
% Power supply
Mvoltagesources DC  2 1
1 1
V
1
6 0  
END

and of the .nms file named "and.nms shown below

Code: IFF netlist for the AND gate (.nms file)
% 0.1b1
1 Va
2 Vb
5 Va_and_b
6 Vdd
7 I1
8 I2 
9 I3

Build the AND gate circuit structure parsing a .spc file

Code: Load the AND circuit structure parsing a .spc file
outstruct = prs_spice ("and");


Code: The .spc file for the CMOS AND gate
* AND (simple Algebraic MOS-FET model)

.MODEL mynmos NMOS(LEVEL=simple k=2.94e-05   Vth=0.08	rd=.957e7)
.MODEL mypmos PMOS( k=-2.94e-05   Vth=-0.08	rd=.957e7)

M1 Va 3  4        0 mynmos 
M2 Vb 0  3        0 mynmos 
* nside of the inverter
M3 4  0  Va_and_b 0 mynmos       

M4 Va Vdd 4        Vdd  mypmos
M5 Vb Vdd 4        Vdd  mypmos

* pside of the inverter
M6 4  Vdd Va_and_b Vdd  mypmos  

V1  Va 0 SIN(0.5 0.5 1 0 0)
V2  Vb 0 SIN(0.5 0.5 2 0.25 0)
V3  Vdd 0 1

.END