Ocs package

OCS : Octave Circuit Simulator

File Formats

There are several ways of setting up the data structure for an OCS simulation. The first approach is to just assign the fields of the data structure via Octave commands, otherwise one can parse an ascii file written in (a subste of) SPICE netlist language or in OCS's own netlist specification language called IFF (Interchange File Format)

SPICE netlists

SPICE .spc netlists are parsed via the function "prs_spice", which currently supports the following set of "Element Cards" (after each "Element Card" the instantiating syntax is described)

• Capacitors:

 Cname n+ n- cvalue

• Diodes:

 Cname anode knode modelname <parameters>

• MOS:

 Mname gnode dnode snode bnode modelname <parameters>

N.B.: one instance of a MOS element MUST be preceeded (anywhere in the file) by the declaration of the related model. For instance:

              .MODEL mynmos NMOS( k=1e-4 Vth=0.1 rd=1e6)
              M2 Vgate 0 Vdrain 0 mynmos

• Resistors:

  Rname n+ n- rvalue

• Voltage sources:

  Vname n+ n- <dcvalue> <transvalue>

• • Transvalue specifies a transient voltage source

   SIN(VO  VA  FREQ TD  THETA)

• • • where:
      • VO (offset)
      • VA (amplitude)
      • FREQ (frequency)
      • TD (delay)
      • THETA (damping factor)
    • The signal produced is
      • for time 0 to TD:

    V0

• • • • for time TD to TSTOP:

    VO + VA*exp(-(time-TD)*THETA)*sine(twopi*FREQ*(time+TD))

Currently the damping factor has no effect.

         Pulse
              PULSE(V1 V2 TD TR  TF  PW  PER)

         parameters meaning
            * V1 (initial value)
            * V2 (pulsed value)
            * TD (delay time)
            * TR (rise time)
            * TF (fall time)
            * PW (pulse width)
            * PER (period)

         Currently rise and fall time are not implemented yet.

       - .MODEL cards Defines a model for semiconductor devices

              .MODEL MNAME TYPE(PNAME1=PVAL1 PNAME2=PVAL2 ... )

         TYPE can be:
            * NMOS N-channel MOSFET model
            * PMOS P-channel MOSFET model
            * D diode model

         The parameter "LEVEL" is currently assigned to the field
         "section" in the call of the element functions by the solver.
         Currently supported values for the parameter LEVEL for NMOS
         and PMOS are:
            * simple
            * lincap
         (see documentation of function Mdiode).

         Currently supported values for the parameter LEVEL for D are:
            * simple
         (see documentation of functions Mnmosfet and Mpmosfet).

Tutorials

A CMOS AND GATE

Schematic for a CMOS AND gate

Here we show how to set up the simulation of the CMOS AND gate in the figure. The circuit has

• 9 Elements
  • 6 MOSFETs (3 n-type + 3 p-type)
  • 3 Voltage sources

For the n-type MOSFETs we use a very simple algebraic model defined by the following code

Code: Model evaluator file for simple MOSFET models

function [a,b,c] = Mnmosfet (string, parameters, parameternames, extvar, intvar, t) switch string case 'simple', rd = 1e6; for ii=1:length(parameternames) eval([parameternames{ii} "=",... num2str(parameters(ii)) " ;"]) endfor vg = extvar(1); vs = extvar(2); vd = extvar(3); vb = extvar(4); vgs = vg-vs; vds = vd-vs; if (vgs < Vth) gm = 0; gd = 1/rd; id = vds*gd; elseif ((vgs-Vth)>=(vds))&(vds>=0) id = k*((vgs-Vth)*vds-(vds^2)/2)+vds/rd; gm = k*vds; gd = k*(vgs-Vth-vds)+1/rd; elseif ((vgs-Vth)>=(vds))&(vds<0) gm = 0; gd = 1/rd; id = vds*gd; else # (i.e. if 0 <= vgs-vth <= vds) id = k*(vgs-Vth)^2/2+vds/rd; gm = k*(vgs-Vth); gd = 1/rd; endif a = zeros(4); b = [ 0 0 0 0; -gm (gm+gd) -gd 0; gm -(gm+gd) gd 0; 0 0 0 0]; c = [0 -id id 0]'; break; otherwise error(["Mnmosfet: unknown option " string]); endswitch endfunction

The model for the p-type devices is entirely analogous.

Below we show three methods for constructing the circuit data structure

• using an Octave script
• parsing a SPICE netlist
• parsing an IFF netlist

Once the circuit data structure is loaded the simulation can be started by the following commands

Code: Run the AND gate simulation

x = [.5 .5 .33 .66 .5 1 0 0 1 ]'; t = linspace (0, .5, 100); pltvars = {"Va", "Vb", "Va_and_b"}; dmp = .2; tol = 1e-15; maxit = 100; out = tst_backward_euler (outstruct, x, t, tol, maxit, pltvars);

Result of the CMOS AND gate switching simulation

Click on the figure to the right to see the simulation results

Build the AND GATE structure directly

Code: Build the AND GATE structure via an Octave script

## NLC # n-type outstruct.NLC(1).func = "Mnmosfet"; outstruct.NLC(1).section = "simple"; outstruct.NLC(1).nextvar = 4; outstruct.NLC(1).npar = 3; outstruct.NLC(1).nparnames = 3; outstruct.NLC(1).parnames = { "k", "Vth", "rd"}; outstruct.NLC(1).pvmatrix = [1.0000e-04 1.0000e-01 1.0000e+07 1.0000e-04 1.0000e-01 1.0000e+07 1.0000e-04 1.0000e-01 1.0000e+07]; outstruct.NLC(1).vnmatrix = [1 3 4 0 2 0 3 0 4 0 5 0]; outstruct.NLC(1).nintvar = [0 0 0]; outstruct.NLC(1).osintvar = [0 0 0]; # p-type outstruct.NLC(2).func = "Mpmosfet"; outstruct.NLC(2).section = "simple"; outstruct.NLC(2).nextvar = 4; outstruct.NLC(2).npar = 3; outstruct.NLC(2).nparnames = 3; outstruct.NLC(2).parnames = { "k", "Vth", "rd"}; outstruct.NLC(2).pvmatrix = [-1.0000e-04 -1.0000e-01 1.0000e+07 -1.0000e-04 -1.0000e-01 1.0000e+07 -1.0000e-04 -1.0000e-01 1.0000e+07]; outstruct.NLC(2).vnmatrix = [ 1 6 4 6 2 6 4 6 4 6 5 6]; outstruct.NLC(2).nintvar = [0 0 0]; outstruct.NLC(2).osintvar = [0 0 0]; # Va and Vb outstruct.NLC(3).func = "Mvoltagesources"; outstruct.NLC(3).section = "sinwave"; outstruct.NLC(3).nextvar = 2; outstruct.NLC(3).npar = 4; outstruct.NLC(3).nparnames = 4; outstruct.NLC(3).parnames = {"Ampl", "f", "delay", "shift"}; outstruct.NLC(3).pvmatrix = [0.50000 1.00000 0.00000 0.50000 0.50000 2.00000 0.25000 0.50000]; outstruct.NLC(3).vnmatrix = [ 1 0 2 0]; outstruct.NLC(3).nintvar = [1 1]; outstruct.NLC(3).osintvar = [0 0]; ## LCR # Vdd outstruct.LCR(1).func = "Mvoltagesources"; outstruct.LCR(1).section = "DC"; outstruct.LCR(1).nextvar = 2; outstruct.LCR(1).npar = 1; outstruct.LCR(1).nparnames = 1; outstruct.LCR(1).parnames = {"V"}; outstruct.LCR(1).pvmatrix = 1; outstruct.LCR(1).vnmatrix = [6 0]; outstruct.LCR(1).nintvar = 1; outstruct.LCR(1).osintvar = 2; ## outstruct.namesn = [1 2 5 6 7 8 9]; outstruct.namess = {"Va", "Vb", "Va_and_b", "Vdd", "I1", "I2", "I3"}; outstruct.totextvar = 6; outstruct.totintvar = 3;

Build the AND gate circuit structure parsing an IFF netlist

To parse an IFF format netlist of the CMOS AND gate we can use the following command

Code: Load the AND circuit structure parsing an IFF netlist

outstruct = prs_iff ("and");

The IFF netlist consists of the .cir file named "and.cir" shown below

Code: IFF netlist for the AND gate (.cir file)

% 0.1b1 % A Simple CMOS AND GATE % % N-Mosfets % There are 3 N-Mosfets Mnmosfet simple 4 3 3 3 k Vth rd 1e-4 0.1 1e7 1e-4 0.1 1e7 1e-4 0.1 1e7 1 3 4 0 2 0 3 0 4 0 5 0 % % P-Mosfets Mpmosfet simple 4 3 3 3 k Vth rd -1e-4 -0.1 1e7 -1e-4 -0.1 1e7 -1e-4 -0.1 1e7 1 6 4 6 2 6 4 6 4 6 5 6 % % Input voltage sources Mvoltagesources sinwave 2 4 2 4 Ampl f delay shift 0.5 1 0.0 0.5 0.5 2 0.25 0.5 1 0 2 0 END % % Power supply Mvoltagesources DC 2 1 1 1 V 1 6 0 END

and of the .nms file named "and.nms shown below

Code: IFF netlist for the AND gate (.nms file)

% 0.1b1 1 Va 2 Vb 5 Va_and_b 6 Vdd 7 I1 8 I2 9 I3

Build the AND gate circuit structure parsing a .spc file

Code: Load the AND circuit structure parsing a .spc file

outstruct = prs_spice ("and");

Code: The .spc file for the CMOS AND gate

* AND (simple Algebraic MOS-FET model) .MODEL mynmos NMOS(LEVEL=simple k=2.94e-05 Vth=0.08 rd=.957e7) .MODEL mypmos PMOS( k=-2.94e-05 Vth=-0.08 rd=.957e7) M1 Va 3 4 0 mynmos M2 Vb 0 3 0 mynmos * nside of the inverter M3 4 0 Va_and_b 0 mynmos M4 Va Vdd 4 Vdd mypmos M5 Vb Vdd 4 Vdd mypmos * pside of the inverter M6 4 Vdd Va_and_b Vdd mypmos V1 Va 0 SIN(0.5 0.5 1 0 0) V2 Vb 0 SIN(0.5 0.5 2 0.25 0) V3 Vdd 0 1 .END